Advanced Materials publication

Congratulations to Xilin Zhou et al on their recent publication in Advanced Materials which demonstrates how Sb2Te1 layers can be used to subject GeTe layers to biaxial tensile strain. This strain engineered structural design increases the switching rate of the GeTe layers whilst also decreasing the switching energy. Consequently when these materials are incorporated into random access memory devices the energy required to store data is decreased. If these memory cells are incorporated in to smart phones and laptops, the battery lifetime is expected to increased.

 

Read all about the work here: DOI: 10.1002/adma.201505865 or download the article here.

Image credit: Adam Simpson

 

Talk at SIOM, Shanghai, China

R. E. Simpson will give a talk at the Shanghai Institute of Optics and Fine Mechanics on 24th June 2015.

Phase change materials: structure, design, and applications in photonics

The crystallisation kinetics, electrical properties, and the refractive index of the well known GeTe-Sb2Te3 phase change data storage materials are commonly tuned by adjusting the composition or alloying with other elements. However, the effect of strain has not been exploited as a means to design the properties of phase change materials, yet in microelectronics material research, ‘strain engineering’ is the principal technique used to enhance the performance of metal oxide semiconductor field-effect transistors (MOSFETs). In this presentation I will describe how strain can be used to tune phase change materials and phase change superlattice structures. The talk will include our latest results from experiment and simulation whilst also projecting forward to discuss the application of phase change materials to photonics.

Talk at Dalian University of Technology, China

R. E. Simpson will give a talk at the Dalian University of Technology on 22/23rd June 2015.

Phase change materials: structure, design, and applications in photonics

The crystallisation kinetics, electrical properties, and the refractive index of the well known GeTe-Sb2Te3 phase change data storage materials are commonly tuned by adjusting the composition or alloying with other elements. However, the effect of strain has not been exploited as a means to design the properties of phase change materials, yet in microelectronics material research, ‘strain engineering’ is the principal technique used to enhance the performance of metal oxide semiconductor field-effect transistors (MOSFETs). In this presentation I will describe how strain can be used to tune phase change materials and phase change superlattice structures. The talk will include our latest results from experiment and simulation whilst also projecting forward to discuss the application of phase change materials to photonics.