Congratulations to Xilin Zhou et al on their recent publication in Advanced Materials which demonstrates how Sb2Te1 layers can be used to subject GeTe layers to biaxial tensile strain. This strain engineered structural design increases the switching rate of the GeTe layers whilst also decreasing the switching energy. Consequently when these materials are incorporated into random access memory devices the energy required to store data is decreased. If these memory cells are incorporated in to smart phones and laptops, the battery lifetime is expected to increased.
Read all about the work here: DOI: 10.1002/adma.201505865 or download the article here.
Image credit: Adam Simpson