Talk at SIOM, Shanghai, China

R. E. Simpson will give a talk at the Shanghai Institute of Optics and Fine Mechanics on 24th June 2015.

Phase change materials: structure, design, and applications in photonics

The crystallisation kinetics, electrical properties, and the refractive index of the well known GeTe-Sb2Te3 phase change data storage materials are commonly tuned by adjusting the composition or alloying with other elements. However, the effect of strain has not been exploited as a means to design the properties of phase change materials, yet in microelectronics material research, ‘strain engineering’ is the principal technique used to enhance the performance of metal oxide semiconductor field-effect transistors (MOSFETs). In this presentation I will describe how strain can be used to tune phase change materials and phase change superlattice structures. The talk will include our latest results from experiment and simulation whilst also projecting forward to discuss the application of phase change materials to photonics.