R. E. Simpson will give a talk at the Dalian University of Technology on 22/23rd June 2015.
Phase change materials: structure, design, and applications in photonics
The crystallisation kinetics, electrical properties, and the refractive index of the well known GeTe-Sb2Te3 phase change data storage materials are commonly tuned by adjusting the composition or alloying with other elements. However, the effect of strain has not been exploited as a means to design the properties of phase change materials, yet in microelectronics material research, ‘strain engineering’ is the principal technique used to enhance the performance of metal oxide semiconductor field-effect transistors (MOSFETs). In this presentation I will describe how strain can be used to tune phase change materials and phase change superlattice structures. The talk will include our latest results from experiment and simulation whilst also projecting forward to discuss the application of phase change materials to photonics.