Interfacial Phase Change Memory Paper awarded prestigious best paper award

Authors of Interfacial Phase Change Memory
Authors of Interfacial Phase Change Memory

R.E. Simpson (ACTA Lab Principle Investigator), P Fons, A. V. Kolobov, T. Fukaya, M. Krbal, T. Yagi, and J. Tominaga were awarded the the best paper prize for their Nature Nanotechnology article: R. E. Simpson, P. Fons, A. V. Kolobov, T. Fukaya, M. Krbal, T. Yagi, and J. Tominaga Nat. Nano. 6(8) 501-505 (2011).

The prize was awarded by the Japanese Institute for Advanced Industrial Science and Technology (AIST) chairmen on the 5th November 2014. AIST usually presents the best paper award two or three years after paper publication such that the paper’s impact can be properly measured. The AIST chairpeople recognised that the paper has stimulated new domestic and international research projects leading to a new field in nano structured phase change materials.

The paper was published in 2011 and describes how the interface between two different phase change materials, GeTe and Sb2Te3, can be designed and engineered to create improved phase change memory behaviour. The special phase change superlattice structure is known as an Interfacial Phase Change Material (iPCM). A followup paper, which was published in 2012 and highlighted in Nature Nanotechnology, goes further to describe how switching in iPCM memory devices is influenced by a magnetic field and this strongly indicates the existence of a topologically non-trivial band-structure.

The iPCM project was R. E Simpson’s postdoctoral project from 2008 until 2011. Prof Tominaga of AIST was the principle investigator for the iPCM project. Prof Tominaga accepted the award at a ceremony held in Tsukuba, Japan, on the 5th of November 2014.

Prof Tominaga’s presentation (in Japanese) at the awards ceremony can viewed below:

Further details (in Japanese) can also be found here and here.