The ACTAlab (www.actalab.com/) at SUTD seeks applicants for a full-time postdoctoral position in theoretical materials science. The successful candidate will apply Density Functional Theory (DFT) methods to study structural phase transitions. In particular, the aim will be to understand, design, and optimise phase change materials for electrical memory applications. The position involves collaborating work with experimentalists who are also studying these phase transitions. The ideal candidate will have:
a PhD in Physics, Material Science, or a related field.
knowledge and experience using density functional theory codes.
a thorough understanding of condensed matter science.
high level of motivation.
a positive personality.
a good level of written and verbal English communication.
a proven publication record.
experience with VASP and good programming skills will be an advantage.
he/she should also be willing to work in collaboration with experimentalists.
Congratulations to NUS High School students, Chloe and Luis, for completing a highly multidisciplinary project in ACTAlab. They built and programmed a Kretschmann prism coupling system, and then used it to analyse the cancer biomarker sensing ability of our Black Silver material.
Congratulations to Jitendra Behera. His paper describes how the electrical resistance of crystalline phase change data storage materials can change on a nanosecond times scales without changing phase. This discovery may enable universal memories to be realised.
Congratulations to ACTAlab PhD student, Ms Weiling Dong, for winning the best poster award at the EPCOS conference, which was held at Trinity College, Cambridge, UK 5th-6th Sept. Weiling’s poster discusses the combination of plasmonic nanogratings and the phase change material Ge2Sb2Te5 to create structural colour. More details of Weiling’s work can be found here.
Today, Xilin Zhou’s paper, which discusses how oxygen doping influences the the local structure of GeTe, has been published in ACS Applied Materials and Interfaces.
Interestingly when oxygen is added into GeTe, the energy required to switch the material in a phase change random access memory cell is lowered, yet counter intuitively the crystallization temperature is increased by O doping. Previously we showed that there is zero change in density for O concentrations of about 5 at.%. We believe that this allows the material to be switched with a lower enthalpy change, hence explaining the energy efficient memory switching.
The paper is available here: http://pubs.acs.org/doi/abs/10.1021/acsami.6b05071
Our paper on the design of strain engineered chalcogenide superlattices has been published in Nature Communications. The paper presents the design rules for creating superlattices with switchable properties.