Categories

  • No categories
Home 2018-10-21T07:08:47+00:00

 Ultra-thin Gate Oxide (GOx) Reliability Research Group

Welcome

                                                                  Welcome to Gate Oxide (GOx) Reliability Group at Singapore University of Technology and Design (SUTD). Our research work focuses on understanding the degradation and failure mechanism in advanced logic and memory devices (including FinFET, RRAM, STT-RAM) and emerging 2D-based dielectric materials/devices. We routinely use physio-electrical-chemical (PEC) analysis techniques like transmission electron microscopy (TEM), scanning tunneling microscopy (STM) and conductive atomic force microscopy (CAFM) to decode the understanding of the underlying physical phenomenon. We also employ the design for reliability (DfR) for the reliability enhancement and predictive analysis of advanced semiconductor devices.

News and updates

# [Multiple PhD Positions Available] We have multiple fully funded PhD positions available in the realibility and physical analysis of emerging logic and memory devices. (Details here)

# [Reliability Experts Talk at IIRW] Prof. Pey has been invited to join at “Expert panel workshop on the Front-End device reliability by top 20 experts” at International Integrated Reliability Workshop (IIRW) 2018. (Details here)

# [IEDM 2018We would be presenting our recent work on “Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions” at 64th International Electron Devices Meeting (IEDM) 2018. (Details here)

# [Keynote at EDSSC 2018Prof. Pey has been invited to deliver a keynote on “New opportunities and potential of advanced physical analysis techniques to study nanoscale semiconductor devices”, at 14th IEEE International Conference on Electron Devices and Solid-State Circuits, Shenzhen, China. (Details here)

# [IRPS 2018Our recent work on “Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics”, has been highlighted at International Reliability Physics Symposium (IRPS 2018). (Details here)

Resistive Switching in Atomically Thin h-BN Films

“Conductive atomic force microscope study of bipolar and thershold resistive switching in 2D hexagonal boron nitride films”

Scientific Reports, Vol. 8, 2854, (2018)

Scientific Reports, Vol. 8, 2854, (2018)

Dielectric Breakdown in FinFET Devices

IEDM-2016 and IRPS-2017

“New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study”

IEDM, 2016

2D Emerging Layered Dielectrics: Hexagonal Boron Nitride (h-BN)

Probing Defects in h-BN using Low Frequency Noise Measurements

“Random telegraph noise in 2D hexagonal nitride dielectric films”

Applied Physics Letters, Vol. 112, Issue-13, (2018).

Role of Current Compliance on Conductive Filamant Dimensions in RRAM Devices

Microelectronics Reliability 2015

Emerging 2D Layered Dielectrics: Flourinated Graphene

IRPS 2017

"Nanoscale investigations of soft breakdown events in few layered fluorinated graphene”

Nanoscale Probing of Single Defects in Ultrathin HfO2 Films

International Reliability Physics Symposium (2016)

Atomic Resolution Low Frequency Noise Measurement in HfO2 Films using STM

Journal of Applied Physics (2016)

“Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy”

© Copyright Reserved, Gate Oxide Reliability Group, SUTD, Singapore.