Welcome
Welcome to Gate Oxide (GOx) Reliability Group at Singapore University of Technology and Design (SUTD). Our research work focuses on understanding the degradation and failure mechanism in advanced logic and memory devices (including FinFET, RRAM, STT-RAM) and emerging 2D-based dielectric materials/devices. We routinely use physio-electrical-chemical (PEC) analysis techniques like transmission electron microscopy (TEM), scanning tunneling microscopy (STM) and conductive atomic force microscopy (CAFM) to decode the understanding of the underlying physical phenomenon. We also employ the design for reliability (DfR) for the reliability enhancement and predictive analysis of advanced semiconductor devices.
