Ultra-thin Gate Oxide (GOx) Reliability Research Group


                                                                  Welcome to Gate Oxide (GOx) Reliability Group at Singapore University of Technology and Design (SUTD). Our research work focuses on understanding the degradation and failure mechanism in advanced logic and memory devices (including FinFET, RRAM, STT-RAM) and emerging 2D-based dielectric materials/devices. We routinely use physio-electrical-chemical (PEC) analysis techniques like transmission electron microscopy (TEM), scanning tunneling microscopy (STM) and conductive atomic force microscopy (CAFM) to decode the understanding of the underlying physical phenomenon. We also employ the design for reliability (DfR) for the reliability enhancement and predictive analysis of advanced semiconductor devices.

Openings available

# [Multiple PhD Positions Available] We have multiple fully funded PhD positions available in the realibility and physical analysis of emerging logic and memory devices. Opportunities to do advanced semiconductor research in ultrathin dielectrics reliability, reliability of neuromorphic computation circuits, STT-MRAM devices and ferroelectric devices” with GlobalFoundries (GF), Advanced Micro-Devices Inc. (AMD) and A*STAR. Looking for highly energetic and committed graduate students for performing PhD research under SUTD EDB IPP and SUTD EngD. Email peykinleong@sutd.edu.sg to apply.

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