Professor YEO Kiat Seng (M’00–SM’09–F’16) received his B.Eng. (EE) in 1993, and Ph.D. (EE) in 1996 both from Nanyang Technological University (NTU). Currently, he is Chairman of the University Research Board and Associate Provost for International Relations at Singapore University of Technology and Design (SUTD). Professor Yeo is a widely known authority in low-power RF/mm-wave IC design and a recognized expert in CMOS technology. He was a Member of Board of Advisors of the Singapore Semiconductor Industry Association. Before his appointment at SUTD, he was Associate Chair (Research), Head of Division of Circuits and Systems and Founding Director of VIRTUS of the School of Electrical and Electronic Engineering at NTU. Professor Yeo has secured over S$70M of research funding as Principal Investigator from various funding agencies and the industry since 2000. He has published 10 books, 7 book chapters, over 600 international top-tier refereed journal and conference papers and holds 38 patents. Professor Yeo holds/held key positions in many international conferences as Advisor, General Chair, Co-General Chair and Technical Chair. He was awarded the Public Administration Medal (Bronze) on National Day 2009 by the President of the Republic of Singapore and the Nanyang Alumni Achievement Award in 2009 for his outstanding contributions to the university and society. In 2020, he was conferred the Long Service Medal on National Day by the President of the Republic of Singapore. Professor Yeo is a Fellow of the Singapore Academy of Engineering (SAEng), a Fellow of the Singapore National Academy of Science (SNAS), a Fellow of Asia-Pacific Artificial Intelligence Association (AAIA) and a Fellow of IEEE for his contributions to low-power integrated circuit design. He is the principal author of World University Research Rankings (WURR) 2020. Professor Yeo was recognized among the top 2% scientists worldwide by Stanford University in 2020, 2021, 2022 and 2023.

Important Publications

Press Release of “From 5G to 6G and Beyond: The 7Cs of Future Communications”

Why 6G when 5G is already so fast?
New book explains why with the 7 Cs of Future Communications

Why should countries invest in 6G networks when existing 5G networks are already so powerful? This question might seem irrelevant now, but it will shape the future of countries and businesses.

These days, people are not just accessing digital information in real time but also watching movies, playing games, and enjoying multimedia data streaming services even when onboard airplanes and trains traveling at very high speeds. As human society evolves towards a more data- and network-oriented world, consumers and service providers are seeking more advanced communication systems that offer lower latency, higher bandwidth, and larger data capacities. Hence, efforts are underway to consider beyond state-of-the-art protocols, future chip design and integration, and even standardized guidelines for 6G wireless communication systems.

With wireless connectivity becoming ubiquitous, a future where applications like virtual and augmented reality, artificial intelligence (AI), machine learning and even autonomous vehicles requiring high data rates combined with extremely low latencies, or delays, due to processing time may arrive sooner than we think—if we have the right network architecture to support such a reality. Accordingly, 6G, with its peak data rate of 1Terabit per second and latency of 100 microseconds, should be able to smoothly support these use cases. At the same time, individuals and organisations will expect a trustworthy network that can seamlessly and securely deliver data—meaning that further research must focus on building a holistic 6G network security architecture.

Written by four IEEE Fellows, one Chief Executive Officer, and several leading experts in communications and semiconductors, From 5G to 6G and Beyond: The 7 Cs of Future Communications covers all aspects of future communications from key technologies, design challenges, network requirements and users’ experiences to standardization, chip design and industry applications from 5G to 6G. It demonstrates how two seemingly unrelated technologies in the past can be integrated to create new solutions for the future.
Power consumption is another major consideration when designing future networks. This is because of the current power needs of 5G networks; as explained by Huawei in July 2020 , while the “Energy consumption per unit of data (watt/bit) is much less for 5G than 4G…power consumption is much higher [than 4G networks]”. To address this problem, we must target to deliver the next generation networks that, at their introduction time, does not surpass the previous generation’s energy needs.

Therefore, the next generation of wireless communications and semiconductor technology is expected to work together to meet the energy needs and demands of various challenging use cases that cover a wide range of new applications; from 5G/6G communications, mobile computing, artificial intelligence, and advanced internet of things, to big data, cloud, and edge computing.

From 5G to 6G and Beyond discusses the open problems of future communication systems and chip design, and present new solutions that address these challenges. Specifically, the role of semiconductors in future communications are discussed. The use cases of 6G, the RF transceivers roadmap for 2030 and beyond, as well as the modelling of RF devices for 5G/6G are presented. Additionally, a modified Shannon’s capacity formula that is critical for future advanced wireless communications, is examined for the first time. The standardization of 6G wireless communication systems, with emphasis on Standard Development Organizations (SDOs), regulatory bodies and administrations, ITU, industry forums, and 6G standard timeline, is reported. Finally, the design of RF/mm-wave integrated circuits and systems, which includes voltage-controlled oscillators, power amplifiers, low-noise amplifiers, frequency synthesizers, high-frequency dividers, and chip-to-chip communications isolation technology, is described.

From 5G to 6G and Beyond: The 7 Cs of Future Communications retails for US$118 / £105 (hardcover) andis also available in electronic formats. To order or know more about the book, visit https://www.worldscientific.com/pressroom/2023-04-26-01

Transmitter / Power Amplifier

  • Hang Liu, Xi Zhu, Yisheng Wang, Kai Men, and Kiat Seng Yeo, “A 60 GHz Edge-Coupled 4-Way Balun Power Amplifier with 22.7dBm Output Power and 27.7% Peak Efficiency,” 2021 IEEE MTT-S International Microwave Symposium, Georgia World Congress Center, Atlanta, Georgia, USA, 6-11 June 2021.
  • Xi Sung Loo, Kiat Seng Yeo, Moe Z. Win, Zhichao Li, Xiaopeng Yu, and Jer-Ming Chen, “A K-Band Differential SiGe Stacked Power Amplifier Based on Capacitive Compensation Techniques for Gain Enhancements,” 62nd IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), pp.295-298, Dallas, TX, USA, 4-7 August 2019.
  • Mahalingam Nagarajan, Chan Ka-un, Chou Chien-I, Liao Kun-Hsun, Lin Ying-His, Liu Hang, Tsai Hung-Yu, Wang Wen-Shan, Wang Yisheng, and Kiat Seng Yeo, “A Large Dynamic Range Reconfigurable Interpolation Digital Transmitter for NB-IoT Applications,” IEEE Microwave and Wireless Components Letters, vol.32, no.6, pp.744-747, June 2022.
  • Chun Kit Lam, Meng Tong Tan, Stephen M. Cox, Kiat Seng Yeo, “Class-D Amplifier Power Stage with PWM Feedback Loop,” IEEE Transactions on Power Electronics, vol.28, no.8, pp.3870-3881, August 2013.
  • Chen Lang, Liu Hang, Jefferson Hora, Andrew Zhang, Kiat Seng Yeo, and Xi Zhu, “Monolithically Integrated Single-Input Load-Modulated Balanced Amplifier with Enhanced Efficiency at Power Back-Off,” IEEE Journal of Solid-State Circuits, vol.56, no.5, pp.1553-1564, May 2021.

Neural Network / Analog-to-Digital Converter

  • Haowei Lu, Zhenghao Lu, XiaoPeng Yu, and Kiat Seng Yeo, “A Data-Dependent Calibration Scheme for Non-Linearity of SAR ADC Using Neural Network,” 33rd IEEE International System-On-Chip Conference (IEEE SOCC), Las Vegas, NV, USA, 8-11 September 2020.

Receiver / RF Front End / Low Noise Amplifier

  • Boora Aasish, Bharatha Kumar, and Kiat Seng Yeo, “An Ultra-Low Power 900 MHz Intermediate Frequency Low Noise Amplifier for Low-Power RF Receivers,” 33rd IEEE International System-On-Chip Conference (IEEE SOCC), Las Vegas, NV, USA, 8-11 September 2020.
  • Boora, B. K. Thangarasu, and Kiat Seng Yeo, “Nanowatt Receiver for High Data-rate Advanced IoT and Microwave Applications: A Novel Exploitation of Body-Bias and Stage Ratios in Dickson Detector,” IEEE Nanotechnology Magazine, vol.16, no.3, pp.16-25, June 2022.
  • Hang Liu, Xi Zhu, Yisheng Wang, Kai Men, and Kiat Seng Yeo, “A 60 GHz 8-Way Combined Power Amplifier in 18 μm SiGe BiCMOS,” IEEE Transactions on Circuits and Systems – II, vol.68, no.6, pp.1847-1851, June 2021.
  • Boyu Hu, Xiao Peng Yu, Wei Meng Lim, and Kiat Seng Yeo, “Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability,” IEEE Transactions on Industrial Electronics, vol.61, no.10, pp.5672-5680, October 2014.  

Transimpedance Amplifier

  • S. Lee, H. Liu, and Kiat Seng Yeo, “An Inductorless 6-GHz Variable-Gain Differential Transimpedance Amplifier in 0.18-um SiGe BiCMOS,” IEEE International Symposium on Circuits and Systems (ISCAS), pp.1-5, Sapporo, Japan, 26-29 May 2019 (Special Session).

Antenna / Antenna Array

  • Xi Sung Loo, Moe Z. Win, and Kiat Seng Yeo, “Millimeter-Wave Sine Corrugated Fermi Tapered Slot Antenna Array Based on Partial Synthesized Dielectric,” 2019 IEEE Radio and Wireless Symposium (RWS), pp.1-4, Orlando, FL, USA, 20-23 January 2019.

Variable-Gain Amplifier / Programmable-Gain Amplifier

  • Hang Liu, Xi Zhu, Muting Lu, and Kiat Seng Yeo, “Design of a Voltage-Controlled Programmable-Gain Amplifier in 65-nm CMOS Technology,” 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, Massachusetts, USA, 2-7 June 2019.
  • Kong, H. Liu, X. Zhu, C. C. Boon, C. Li, Z. Liu, and Kiat Seng Yeo, “Design of a Wideband Variable-Gain Amplifier with Self-Compensated Transistor for Accurate dB-Linear Characteristic in 65 nm CMOS Technology,” IEEE Transactions on Circuits and Systems I – Regular Papers, vol.67, no.12, pp.4187-4198, December 2020.
  • Hang Liu, Xi Zhu, Muting Lu, Yichuang Sun, and Kiat Seng Yeo, “Design of Reconfigurable dB-Linear Variable-Gain Amplifier and Switchable-Order Gm-C Filter in 65-nm CMOS Technology,” IEEE Transactions on Microwave Theory and Techniques, vol.67, no.12, pp.5148-5158, December 2019.
  • Song Xiong, Lu Zhenghao, Cai Liying, Yu Xiaopeng, Kiat Seng Yeo, and Cher Jer-Ming, “A Wideband dB-Linear VGA with Temperature Compensation and Active Load,” IEEE Transactions on Circuits and Systems – I: Regular Papers, 66, no.9, pp.3279-3287, September 2019.

Frequency Synthesizer / Phase-Locked Loop / Frequency Divider

  • Mahalingam, Kiat Seng Yeo, and B. K. Thangarasu, “A Wide Locking Range Harmonic Enhanced Injection Locked Frequency Divide-By-4 with Low Injected Power Level,” 2018 IEEE MTT-S International Wireless Symposium (IWS), Chengdu, 6-10 May 2018 (Invited).

Device Modeling / De-embedding Technique

  • H.K. Chan, Kiat Seng Yeo, K.W.J. Chew, and Shih Ni Ong, “High-Frequency Noise Modeling of MOSFETs for Ultra Low-Voltage RF Applications,” IEEE Transactions on Microwave Theory and Techniques, vol.63, no.1, pp.141-154, January 2015. 
  • Shih Ni Ong, Kiat Seng Yeo, K.W.J. Chew, and L.H.K. Chan, “Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs,” IEEE Transactions on Microwave Theory and Techniques, vol.62, no.9, pp.1973-1985, September 2014.  
  • Xi Sung Loo, Kiat Seng Yeo, and K.W.J. Chew, “THRU-Based Cascade De-Embedding Technique for On-Wafer Characterization of RF CMOS Devices,” IEEE Transactions on Electron Devices, vol.60, no.9, pp.2892-2899, September 2013.

Voltage-Controlled Oscillator

  • Wei Fei, Hao Yu, Haipeng Fu, Junyan Ren, and Kiat Seng Yeo, “Design and Analysis of Wide Frequency-Tuning-Range CMOS 60 GHz VCO by Switching Inductor Loaded Transformer,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol.61, no.3, pp.699-711, March 2014.  

Content Addressable Memory

  • Anh Tuan, Y. Chun, K. Velayudhan, L. Zhao Chuan, Kiat Seng Yeo, and T. T. H. Kim, “0.77 fJ/bit/search Content Addressable Memory Using Small Match Line Swing and Automated Background Checking Scheme for Variation Tolerance,” IEEE Journal of Solid-State Circuits, vol.49, no.7, pp. 1487-1498, July 2014.

Special Issue “Millimeter-Wave Integrated Circuits and Systems for 5G Applications, Volume II”



A special issue of Electronics (ISSN 2079-9292).
This special issue belongs to the section
Circuit and Signal Processing“.

Special Issue “Selected Papers from the 2nd International Electronic Conference—Enabling Nanoelectronics”

Special Issue Editor:
Dr. Kiat Seng Yeo  

Guest Editor

Engineering Product Development (EPD), Singapore University of Technology and Design, Singapore 487372, Singapore

Interests: circuits and systems; low-power integrated circuit design; visible light communications; CMOS technology; RF/mm-wave integrated circuit design; VLSI/ULSI design; memory Special Issues, Collections and Topics in MDPI journals

For more information, visit https://www.mdpi.com/si/99724

Contact me

Professor Yeo Kiat Seng
Associate Provost for International Relations
Professor, Engineering Product Development

Singapore University of Technology and Design
8 Somapah Road, #07-301, Building 3, Level 7

Singapore 487372

Email: kiatseng_yeo@sutd.edu.sg
Tel: (+65) 6499 4895