• Prof. Dan Hewak, University of Southampton, UK: “The studies by Loke et al., along with related work in other labs, should not only pave the way for phase-change memories with ultrafast switching speeds, low-energy consumption, and reduced memory cell sizes, but also lead to a better understanding of the mechanisms responsible for the phase-change phenomena that could further improve switching speeds.” – Science

• Prof. C. David Wright, University of Exeter, UK: “Such a fast switching means that phase-change memories can compete with conventional silicon-based dynamic random access memories, at least on speed and scaling terms, opening up a potential new application route for phase-change technology.” – RSC Chemistry World

• Dr Robert E. Simpson, (formerly at) Institute of Photonic Sciences, Spain: “Most researchers have tried to improve the switching speed of phase change memory by randomly inserting metals into GST. Learning how to create crystal seeds through simulations and then demonstrating how these seeds speed crystallization in a device is a more scientific approach to developing new memory materials.” – Ars Technica