Today, Xilin Zhou’s paper, which discusses how oxygen doping influences the the local structure of GeTe, has been published in ACS Applied Materials and Interfaces.
Interestingly when oxygen is added into GeTe, the energy required to switch the material in a phase change random access memory cell is lowered, yet counter intuitively the crystallization temperature is increased by O doping. Previously we showed that there is zero change in density for O concentrations of about 5 at.%. We believe that this allows the material to be switched with a lower enthalpy change, hence explaining the energy efficient memory switching.
The paper is available here: http://pubs.acs.org/doi/abs/10.1021/acsami.6b05071